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H8S/2214 Scheda tecnica(PDF) 652 Page - Renesas Technology Corp |
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H8S/2214 Scheda tecnica(HTML) 652 Page - Renesas Technology Corp |
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652 / 936 page ![]() Section 15 ROM Rev.4.00 Sep. 18, 2008 Page 592 of 872 REJ09B0189-0400 15.13.5 Auto-Erase Mode 1. Auto-erase mode supports only entire memory erasing. 2. Do not perform a command write during auto-erasing. 3. Confirm normal end of auto-erasing by checking I/O6. Alternatively, status read mode can also be used for this purpose (I/O7 status polling uses the auto-erase operation end decision pin). 4. Status polling I/O6 and I/O7 pin information is retained until the next command write. As long as the next command write has not been performed, reading is possible by enabling CE and OE. Table 15.19 AC Characteristics in Auto-Erase Mode Conditions: V CC = 3.3 V ±3.0 V, VSS = 0 V, Ta = 25°C ±5°C Item Symbol Min. Max. Unit Notes Command write cycle t nxtc 20 µs CE hold time t ceh 0 ns CE setup time t ces 0 ns Data hold time t dh 50 ns Data setup time t ds 50 ns Write pulse width t wep 70 ns Status polling start time t ests 1 ms Status polling access time t spa 150 ns Memory erase time t erase 100 40000 ms Erase setup time t ens 100 ns Erase end setup time t enh 100 ns WE rise time t r 30 ns WE fall time t f 30 ns |
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