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H8S/2224 Scheda tecnica(PDF) 44 Page - Renesas Technology Corp

Il numero della parte H8S/2224
Spiegazioni elettronici  16-Bit Single-Chip Microcomputer H8S Family/H8S/2200 Series
PDF  1071 Pages
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Produttore elettronici  RENESAS [Renesas Technology Corp]
Homepage  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

H8S/2224 Scheda tecnica(HTML) 44 Page - Renesas Technology Corp

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Rev. 5.00 Aug 08, 2006 page xliv of lxxxvi
Item
Page
Revision (See Manual for Details)
27.2.2 DC Characteristics
Table 27.2 DC
Characteristics (1)
845,
846
Table 27.2 amended
Item
Symbol
RES, STBY,
NMI, MD2 to
MD0, FWE
EXTAL, Ports
1, 3, 7, and A
to G
Input high
voltage
Ports 4 and 9
VIH
RES, STBY,
MD2 to MD0,
FWE
Input low
voltage
NMI, EXTAL,
Ports 1, 3, 4,
7, 9, and A to
G
VIL
RES
STBY, NMI,
MD2 to MD0,
FWE
Input
leakage
current
Ports 4 and 9
| Iin |
27.2.6 Flash Memory
Characteristics
Table 27.12 Flash Memory
Characteristics
863
Note 7 amended
Note: 7. Reference value at 25°C. (Normally, it is a
reference that rewriting is enabled up to this value.)
27.3.2 DC Characteristics
Table 27.14 DC
Characteristics (2)
868
Note 3 amended
Note: 3. The values are for VRAM ≤ VCC < 2.7 V, VIH min =
VCC – 0.2, and VIL max = 0.2 V.
Table 27.14 DC
Characteristics (3)
870
Note 3 amended
Note: 3. The values are for VRAM ≤ VCC < 2.2 V, VIH min =
VCC – 0.2, and VIL max = 0.2 V.
884
Table 27.24 amended
Absolute accuracy*
27.3.5 D/A Conversion
Characteristics
Table 27.24 D/A Conversion
Characteristics
Note: * Does not apply in module stop mode, software
standby mode, watch mode, subactive mode, or subsleep
mode.
27.3.6 Flash Memory
Characteristics
Table 27.25 Flash Memory
Characteristics
885
Table 27.25 amended
Item
Symbol Min
Typ
Max
Unit
Test
Conditions
Programming time*
1*2*4
tP
10
200
ms/128 bytes
Erase time*
1*3*5
tE
100
1200
ms/block
Reprogramming count
NWEC
100*
6
10000*
7
Times
Data hold time*
8
tDRP
10

year



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