H8SSLASH2224 datasheet(801/1071 Pages) RENESAS

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Section 20 Flash Memory (F-ZTAT Version)

Rev. 5.00 Aug 08, 2006 page 715 of 982

REJ09B0054-0500

Section 20 Flash Memory (F-ZTAT Version)

The features of the flash memory are summarized below.

The block diagram of the flash memory is shown in figure 20.1.

20.1

Features

• Capacity

H8S/2239: 384 kbytes

H8S/2258: 256 kbytes

H8S/2238B: 256 kbytes

H8S/2238R: 256 kbytes

H8S/2227: 128 kbytes

• Programming/erase methods

The flash memory is programmed 128 bytes at a time. Erase is performed in single-block units.

The flash memory of the H8S/2239 is configured as follows: 64 kbytes × 5 blocks, 32 kbytes ×

1 block, and 4 kbytes × 8 blocks. The flash memory of the H8S/2258, H8S/2238B, and

H8S/2238R is configured as follows: 64 kbytes × 3 blocks, 32 kbytes × 1 block, and 4 kbytes ×

8 blocks. The flash memory of the H8S/2227 is configured as follows: 32 kbytes × 2 blocks,

28 kbytes × 1 block, 16 kbytes × 1 block, 8 kbytes × 2 blocks, and 1 kbyte × 4 blocks. To erase

the entire flash memory, each block must be erased in turn.

• Reprogramming capability

The flash memory can be reprogrammed for 100 times.

• Two programming modes

Boot mode

User program mode

On-board programming/erasing can be done in boot mode, in which the boot program built

into the chip is started to erase or program of the entire flash memory. In normal user program

mode, individual blocks can be erased or programmed.

• Automatic bit rate adjustment

For data transfer in boot mode, this LSI’s bit rate can be automatically adjusted to match the

transfer bit rate of the host.

• Programming/erasing protection

There are three protect modes, hardware, software, and error protect, which allow protected

status to be designated for flash memory program/erase operations.

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