H8SSLASH2224 datasheet(845/1071 Pages) RENESAS

845 / 1071 page

Section 22 PROM

Rev. 5.00 Aug 08, 2006 page 759 of 982

REJ09B0054-0500

22.3

Programming

Table 22.3 shows how to select the program, verify, and other modes in PROM mode.

Table 22.3 Mode Selection in PROM Mode

Pins

Mode

PGM

PGM VPP

VCC

EO7 to EO0

EA16 to EA0

Program

VPP

VCC

Data input

Address input

Verify

LLH

VPP

VCC

Data output

Address input

Programming prohibited LLLVPP

VCC

High impedance Address input

HHH

Legend:

Low voltage level

High voltage level

VPP:VPP voltage level

VCC:VCC voltage level

Programming and verification should be carried out using the same specifications as for the

standard HN27C101 EPROM.

However, do not set the PROM programmer to page mode does not support page programming. A

PROM programmer that only supports page programming cannot be used. When choosing a

PROM programmer, check that it supports high-speed programming in byte units. Always set

addresses within the range H'00000 to H'1FFFF.

22.3.1

Programming and Verification

An efficient, high-speed programming procedure can be used to program and verify PROM data.

This procedure writes data quickly without subjecting the chip to voltage stress or sacrificing data

reliability. It leaves the data H'FF in unused addresses. Figure 22.4 shows the basic high-speed

programming flowchart. Tables 22.4 and 22.5 list the electrical characteristics of the chip during

programming. Figure 22.5 shows a timing chart.

H8S/2224 Scheda tecnica(PDF) 845 Page - Renesas Technology Corp

H8S/2224 Scheda tecnica(HTML) 845 Page - Renesas Technology Corp

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 ...More

Scheda tecnica Scarica

Link URL