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IS46LR16640C Scheda tecnica(PDF) 25 Page - Integrated Silicon Solution, Inc

Il numero della parte IS46LR16640C
Spiegazioni elettronici  1Gb (x16, x32) Mobile DDR SDRAM
PDF  47 Pages
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Produttore elettronici  ISSI [Integrated Silicon Solution, Inc]
Homepage  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS46LR16640C Scheda tecnica(HTML) 25 Page - Integrated Silicon Solution, Inc

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Rev. 0A | October 2022
www.issi.com - dram@issi.com
IS43/46LR32320C
IS43/46LR16640C
Table13 : AC Operating Test Condition
(TA= 0 ~ 70 °C for Commercial, or TA= -40 ~ 85 °C for Industrial or Automotive, VDD = 1.7V to 1.95V, VSS=0V)
Parameter
Symbol
Value
Unit
AC Input High/Low Level Voltage
VIH / VIL
0.8 x VDDQ / 0.2 x VDDQ
V
Input Timing Measurement Reference Level Voltage
VTRIP
0.5 x VDDQ
V
Input Rise / Fall Time
tR / tF
1 / 1
ns
Output Timing Measurement Reference Level Voltage
VOUTREF
0.5 x VDDQ
V
Output Load Capacitance for Access Time Measurement
CL
30
pF
Figure8 : Output load circuit
Table12 : Capacitance (TA=25 °C, f=1MHz, VDD=1.8V)
Parameter
Pin
Symbol
Min
Max
Unit
Input Capacitance
CK, /CK
CI1
1.5
5
pF
A0~A13, BA0~BA1, CKE, /CS, /RAS,
/CAS, /WE
CI2
1.5
5
pF
DM0~DM3
CI3
3.0
5.0
pF
Data & DQS Input/Output Capacitance
DQ0~DQ31, DQS0~DQS3
CIO
3.0
5.0
pF
Table14 : AC Overshoot/Undershoot Specification
Parameter
Specification
Maximum Peak Amplitude allowed for Overshoot Area
0.9V
Maximum Peak Amplitude allowed for Undershoot Area
0.9V
Maximum Overshoot Area above VDD/VDDQ
3V-ns
Maximum Undershoot Area below VSS/VSSQ
3V-ns
Figure9 : AC Overshoot/Undershoot Definition
Maximum Amplitude
VDD/VDDQ
VSS/VSSQ
Voltage [V]
Maximum Amplitude
Time [ns]
Overshoot Area
Undershoot Area
Output
10.6KΩ
13.9KΩ
VDDQ
30pF
Output
30pF
50Ω
VTT=0.5 x VDDQ
Z0=50Ω
DC Output Load Circuit
AC Output Load Circuit



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