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IS46LR16640C Scheda tecnica(PDF) 30 Page - Integrated Silicon Solution, Inc

Il numero della parte IS46LR16640C
Spiegazioni elettronici  1Gb (x16, x32) Mobile DDR SDRAM
PDF  47 Pages
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Produttore elettronici  ISSI [Integrated Silicon Solution, Inc]
Homepage  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS46LR16640C Scheda tecnica(HTML) 30 Page - Integrated Silicon Solution, Inc

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Rev. 0A | October 2022
www.issi.com - dram@issi.com
IS43/46LR32320C
IS43/46LR16640C
Timing Diagram
Bank/row Activation
The Active command is used to activate a row in particular bank for a subsequent Read or Write access. The value of the BA0,BA1 inputs
selects the bank, and the address provided on A0-A13 (or the highest address bit) selects the row.
Before any READ or WRITE commands can be issued to a bank within the Mobile DDR SDRAM, a row in that bank must be opened. This
is accomplished via the ACTIVE command, which selects both the bank and the row to be activated. The row remains active until a
PRECHARGE (or READ with AUTO PRECHARGE or WRITE with AUTO PRECHARGE) command is issued to the bank.
A PRECHARGE (or READ with AUTO PRECHARGE or WRITE with AUTO PRECHARGE) command must be issued before opening a different
row in the same bank.
Figure11 : tRCD, tRRD, tRC
Once a row is Open(with an ACTIVE command) a READ or WRITE command may be issued to that row, subject to the tRCD specification.
tRCD(min) should be divided by the clock period and rounded up to the next whole number to determine the earliest clock edge after the
ACTIVE command on which a READ or WRITE command can be entered.
A subsequent ACTIVE command to a different row in the same bank can only be issued after the previous active row has been
closed(precharge). The minimum time interval between successive ACTIVE commands to the same bank is defined by tRC. A subsequent
ACTIVE command to another bank can be issued while the first bank is being accessed, which results in a reduction of total row-access
overhead. The minimum time interval between successive ACTIVE commands to different banks is defined by tRRD.
Figure10 : Active command
Notes :
1. RA : Row address
2. BA : Bank address
CLK
/CLK
CKE
/CS
/RAS
/CAS
/WE
RA
BA
A0~A13
BA0, BA1
Don’t care
RD/WT
with AP
ACT
NOP
NOP
NOP
Bank a
ROW
ACT
NOP
/CLK
CLK
Command
T0
T1
T2
T3
A0-A13
BA0, BA1
COL
Bank a
T4
Ta0
Ta1
tRCD
Don’ t care
ROW
Bank b
tRRD
Bank a
ROW
ACT
tRC
Ta2
tCH
tCL
tIS
tIH
tCK



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