| Motore di ricerca datesheet componenti elettronici |
|
IS46LR16640C Scheda tecnica(PDF) 30 Page - Integrated Silicon Solution, Inc |
|
|
|||||||||||||||||||||||||||||
IS46LR16640C Scheda tecnica(HTML) 30 Page - Integrated Silicon Solution, Inc |
|
30 / 47 page ![]() 30 Rev. 0A | October 2022 www.issi.com - dram@issi.com IS43/46LR32320C IS43/46LR16640C Timing Diagram Bank/row Activation The Active command is used to activate a row in particular bank for a subsequent Read or Write access. The value of the BA0,BA1 inputs selects the bank, and the address provided on A0-A13 (or the highest address bit) selects the row. Before any READ or WRITE commands can be issued to a bank within the Mobile DDR SDRAM, a row in that bank must be opened. This is accomplished via the ACTIVE command, which selects both the bank and the row to be activated. The row remains active until a PRECHARGE (or READ with AUTO PRECHARGE or WRITE with AUTO PRECHARGE) command is issued to the bank. A PRECHARGE (or READ with AUTO PRECHARGE or WRITE with AUTO PRECHARGE) command must be issued before opening a different row in the same bank. Figure11 : tRCD, tRRD, tRC Once a row is Open(with an ACTIVE command) a READ or WRITE command may be issued to that row, subject to the tRCD specification. tRCD(min) should be divided by the clock period and rounded up to the next whole number to determine the earliest clock edge after the ACTIVE command on which a READ or WRITE command can be entered. A subsequent ACTIVE command to a different row in the same bank can only be issued after the previous active row has been closed(precharge). The minimum time interval between successive ACTIVE commands to the same bank is defined by tRC. A subsequent ACTIVE command to another bank can be issued while the first bank is being accessed, which results in a reduction of total row-access overhead. The minimum time interval between successive ACTIVE commands to different banks is defined by tRRD. Figure10 : Active command Notes : 1. RA : Row address 2. BA : Bank address CLK /CLK CKE /CS /RAS /CAS /WE RA BA A0~A13 BA0, BA1 Don’t care RD/WT with AP ACT NOP NOP NOP Bank a ROW ACT NOP /CLK CLK Command T0 T1 T2 T3 A0-A13 BA0, BA1 COL Bank a T4 Ta0 Ta1 tRCD Don’ t care ROW Bank b tRRD Bank a ROW ACT tRC Ta2 tCH tCL tIS tIH tCK |
|
Link URL |
| Lei ha avuto il aiuto da alldatasheet? [ DONATE ] |
Di alldatasheet | Richest di pubblicita | contatti | Privacy Policy | Collegamento alla scheda tecnica | scambio Link | Ricerca produttore All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |