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IS46LR16640C Scheda tecnica(PDF) 43 Page - Integrated Silicon Solution, Inc |
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IS46LR16640C Scheda tecnica(HTML) 43 Page - Integrated Silicon Solution, Inc |
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43 / 47 page ![]() 43 Rev. 0A | October 2022 www.issi.com - dram@issi.com IS43/46LR32320C IS43/46LR16640C Figure35 : Power down (Active or Precharge) Figure36 : Deep Power down Power down Power down occurs if CKE is set low coincident with Device Deselect or NOP command and when no accesses are in progress. If power down occurs when all banks are idle, it is Precharge Power Down. If Power down occurs when one or more banks are Active, it is referred to as Active power down. The device cannot stay in this mode for longer than the refresh requirements of the device, without losing data. The power down state is exited by setting CKE high while issuing a Device Deselect or NOP command. A valid command can be issued after tXP. Deep Power down The Deep Power-Down (DPD) mode enables very low standby currents. All internal voltage generators inside the Mobile DDR are stopped and all memory data is lost in this mode. All the information in the Mode Register and the Extended Mode Register is lost. Next Figure, DEEP POWER-DOWN COMMAND shows the DEEP POWER-DOWN command All banks must be in idle state with no activity on the data bus prior to entering the DPD mode. While in this state, CKE must be held in a constant low state. To exit the DPD mode, CKE is taken high after the clock is stable and NOP command must be maintained for at least 200 us. VALID NOP NOP VALID /CLK CLK CKE T0 Command T1 Ta0 tCH tCL DQS, DQ, DM tIS tIH VALID Address tCK VALID tIS tIS tIH tIS tIH T2 Ta1 Tb0 Must not exceed refresh device limits Don’t care Power-down mode entry Power-down mode exit t XP VALID NOP NOP DPD NOP /CLK CLK CKE T0 Command T1 Ta0 DQS, DQ, DM Tb0 Address tCKE VALID tIS T2 Ta1 Ta2 Don’t care Deep Power -down mode entry Deep Power-down mode exit T=200us |
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