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IS46LR16640C Scheda tecnica(PDF) 26 Page - Integrated Silicon Solution, Inc

Il numero della parte IS46LR16640C
Spiegazioni elettronici  1Gb (x16, x32) Mobile DDR SDRAM
PDF  47 Pages
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Produttore elettronici  ISSI [Integrated Silicon Solution, Inc]
Homepage  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS46LR16640C Scheda tecnica(HTML) 26 Page - Integrated Silicon Solution, Inc

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Rev. 0A | October 2022
www.issi.com - dram@issi.com
IS43/46LR32320C
IS43/46LR16640C
Table15B : DC Characteristic (DC operating conditions unless otherwise noted)
Note : 1. Measured with outputs open.
2. Refresh period is 64ms.
3. -75 is for reference only.
Parameter
Symbol
Test Condition
Speed
Unit Note
-5
-6
-75
Operating one bank active-
precharge current
IDD0
tRC = tRC(min), tCK = tCK(min), CKE is HIGH, /CS is
HIGH between valid commands, address inputs are
SWITCHING, data bus inputs are STABLE
95
90
85
mA
1
Precharge power-down
standby current
IDD2P
All banks idle, CKE is LOW, /CS is HIGH, tCK =
tCK(min), address and control inputs are SWITCHING,
data bus inputs are STABLE
10
mA
Precharge power-down
standby current with clock
stop
IDD2PS
All banks idle, CKE is LOW, /CS is HIGH, CK = LOW,
/CK = HIGH, address and control inputs are
SWITCHING, data bus inputs are STABLE
10
mA
Precharge non power-down
standby current
IDD2N
All banks idle, CKE is HIGH, /CS is HIGH, tCK =
tCK(min)
, address and control inputs are SWITCHING,
data bus inputs are STABLE
70
mA
Precharge non power-down
standby current with clock
stop
IDD2NS
All banks idle, CKE is HIGH, /CS is HIGH, CK = LOW,
/CK = HIGH, address and control inputs are
SWITCHING, data bus inputs are STABLE
60
mA
Active power-down standby
current
IDD3P
One bank active, CKE is LOW, /CS is HIGH, tCK =
tCK(min), address and control inputs are SWITCHING,
data bus inputs are STABLE
10
mA
Active power-down standby
current with clock stop
IDD3PS
One bank active, CKE is LOW, /CS is HIGH, CK = LOW,
/CK = HIGH, address and control inputs are
SWITCHING, data bus inputs are STABLE
10
mA
Active non power-down
standby current
IDD3N
One bank active, CKE is HIGH, /CS is HIGH, tCK =
tCK(min), address and control inputs are SWITCHING,
data bus inputs are STABLE
70
mA
Active non power-down
standby current with clock
stop
IDD3NS
One bank active, CKE is HIGH, /CS is HIGH, CK =
LOW, /CK = HIGH, address and control inputs are
SWITCHING, data bus inputs are STABLE
54
mA
Operating burst read current
IDD4R
One bank active, BL=4, CL=3, tCK = tCK(min),
continuous read bursts, IOUT=0mA,
address inputs are SWITCHING, 50% data change
each burst transfer
135
130
125
mA
1
Operating burst write current
IDD4W
One bank active, BL=4, tCK=tCK(min), continuous
write bursts, address inputs are SWITCHING, 50%
data change each burst transfer
135
130
125
mA
1
Auto Refresh Current
IDD5
tRC=138ns, tCK=tCK(min), burst refresh,
CKE is HIGH, address and control inputs are
SWITCHING, data bus inputs are STABLE
160
mA
2
Self
Refresh
Current
PASR
TCSR
IDD6
CKE is LOW
CK=LOW, /CK=HIGH
tCK=tCK(min)
Extended Mode Register set to all 0's, address and
control inputs are STABLE, data bus inputs are
STABLE
mA
4
4 banks
85°C
6.5
45°C
2.3
2 Banks
85°C
4.5
45°C
5.9
1 Bank
85°C
5.2
45°C
1.8
Half
Bank
85°C
4.6
45°C
1.6
Quarter
Bank
85°C
4.6
45°C
1.6
Standby Current in
Deep Power Down Mode
IDD8
Address and control inputs are STABLE, data bus
inputs are STABLE
80
uA
5
4. Values apply for tA ≤ 85oC
5. Typical value at room temperature.



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