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H8S/2214 Scheda tecnica(PDF) 647 Page - Renesas Technology Corp |
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H8S/2214 Scheda tecnica(HTML) 647 Page - Renesas Technology Corp |
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647 / 936 page ![]() Section 15 ROM Rev.4.00 Sep. 18, 2008 Page 587 of 872 REJ09B0189-0400 CE OE CE A18 to A0 OE WE I/O7 to I/O0 Note: Data is latched on the rising edge of WE. tceh twep tf tr tces tnxtc Address stable tds tdh Command write Memory read mode Figure 15.21 Timing Waveforms for Memory Read after Memory Write Table 15.16 AC Characteristics in Transition from Memory Read Mode to Another Mode Conditions: V CC = 3.3 V ±0.3 V, VSS = 0 V, Ta = 25°C ±5°C Item Symbol Min. Max. Unit Notes Command write cycle t nxtc 20 µs CE hold time t ceh 0 ns CE setup time t ces 0 ns Data hold time t dh 50 ns Data setup time t ds 50 ns Write pulse width t wep 70 ns WE rise time t r 30 ns WE fall time t f 30 ns |
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