H8SSLASH2214 datasheet(646/936 Pages) RENESAS

646 / 936 page

Section 15 ROM

Rev.4.00 Sep. 18, 2008 Page 586 of 872

REJ09B0189-0400

Table 15.14 Programmer Mode Commands

Number

1st Cycle

2nd Cycle

Command Name

of Cycles

Mode

Address

Data

Mode

Address

Data

Memory read mode

1 + n

Write

H'00

Read

Dout

Auto-program mode

129

Write

H'40

Write

Din

Auto-erase mode

Write

H'20

Write

H'20

Status read mode

Write

H'71

Write

H'71

Notes: 1. In auto-program mode, 129 cycles are required for command writing by a simultaneous

128-byte write.

2. In memory read mode, the number of cycles depends on the number of address write

cycles (n).

15.13.3

Memory Read Mode

1. After completion of auto-program/auto-erase/status read operations, a transition is made to the

command wait state. When reading memory contents, a transition to memory read mode must

first be made with a command write, after which the memory contents are read.

2. In memory read mode, command writes can be performed in the same way as in the command

wait state.

3. Once memory read mode has been entered, consecutive reads can be performed.

4. After powering on, memory read mode is entered.

Table 15.15 AC Characteristics in Transition to Memory Read Mode

Conditions: V

CC = 3.3 V ±0.3 V, VSS = 0 V, Ta = 25°C ±5°C

Item

Symbol

Min.

Max.

Unit

Notes

Command write cycle

nxtc

µs

CE hold time

ceh

CE setup time

ces

Data hold time

Data setup time

Write pulse width

wep

WE rise time

WE fall time

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