H8SSLASH2214 datasheet(657/936 Pages) RENESAS

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Section 15 ROM

Rev.4.00 Sep. 18, 2008 Page 597 of 872

REJ09B0189-0400

15.13.9

Notes on Memory Programming

1. When programming addresses which have previously been programmed, carry out auto-

erasing before auto-programming.

2. When performing programming using programmer mode on a chip that has been

programmed/erased in an on-board programming mode, auto-erasing is recommended before

carrying out auto-programming.

Notes: 1. The flash memory is initially in the erased state when the device is shipped by Renesas.

For other chips for which the erasure history is unknown, it is recommended that auto-

erasing be executed to check and supplement the initialization (erase) level.

2. Auto-programming should be performed once only on the same address block.

Additional programming cannot be performed on previously programmed address

blocks.

15.14

Flash Memory and Power-Down States

In addition to its normal operating state, the flash memory has power-down states in which power

consumption is reduced by halting part or all of the internal power supply circuitry.

There are three flash memory operating states:

(1) Normal operating mode: The flash memory can be read and written to.

(2) Standby mode: All flash memory circuits are halted, and the flash memory cannot be read or

written to.

State (2) is flash memory power-down state. Table 15.24 shows the correspondence between the

operating states of the LSI and the flash memory.

Table 15.24 Flash Memory Operating States

LSI Operating State

Flash Memory Operating State

High-speed mode

Medium-speed mode

Sleep mode

Normal mode (read/write)

Software standby mode

Hardware standby mode

Standby mode

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