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H8S/2214 Scheda tecnica(PDF) 659 Page - Renesas Technology Corp

Il numero della parte H8S/2214
Spiegazioni elettronici  16-Bit Single-Chip Microcomputer H8S Family/H8S/2200 Series
PDF  936 Pages
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Produttore elettronici  RENESAS [Renesas Technology Corp]
Homepage  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

H8S/2214 Scheda tecnica(HTML) 659 Page - Renesas Technology Corp

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Section 15 ROM
Rev.4.00 Sep. 18, 2008 Page 599 of 872
REJ09B0189-0400
• In user program mode, FWE can be switched between high and low level regardless of the
reset state. FWE input can also be switched during execution of a program in flash memory.
• Do not apply FWE if program runaway has occurred.
• Disconnect FWE only when the SWE1, ESU1, PSU1, EV1, PV1, P1, and E bits in FLMCR1
are cleared.
Make sure that the SWE1, ESU1, PSU1, EV1, PV1, P1, and E bits are not set by mistake when
applying or disconnecting FWE.
(4) Do not apply a constant high level to the FWE pin
Apply a high level to the FWE pin only when programming or erasing flash memory. A system
configuration in which a high level is constantly applied to the FWE pin should be avoided. Also,
while a high level is applied to the FWE pin, the watchdog timer should be activated to prevent
overprogramming or overerasing due to program runaway, etc.
(5) Use the recommended algorithm when programming and erasing flash memory
The recommended algorithm enables programming and erasing to be carried out without
subjecting the device to voltage stress or sacrificing program data reliability. When setting the P1
or E1 bit in FLMCR1, the watchdog timer should be set beforehand as a precaution against
program runaway, etc.
(6) Do not set or clear the SWE1 bit during execution of a program in flash memory
Wait for at least 100 µs after clearing the SWE1 bit before executing a program or reading data in
flash memory. When the SWE1 bit is set, data in flash memory can be rewritten, but access flash
memory only for verify operations (verification during programming/erasing). Also, do not clear
the SWE1 bit during programming, erasing, or verifying.
Similarly, when using emulation by RAM with a high level applied to the FWE pin, the SWE1 bit
should be cleared before executing a program or reading data in flash memory. However,
read/write accesses can be performed in the RAM area overlapping the flash memory space
regardless of whether the SWE1 bit is set or cleared.
(7) Do not use interrupts while flash memory is being programmed or erased
All interrupt requests, including NMI, should be disabled during FWE1 application to give priority
to program/erase operations.



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