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H8S/2224 Scheda tecnica(PDF) 834 Page - Renesas Technology Corp |
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H8S/2224 Scheda tecnica(HTML) 834 Page - Renesas Technology Corp |
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834 / 1071 page ![]() Section 20 Flash Memory (F-ZTAT Version) Rev. 5.00 Aug 08, 2006 page 748 of 982 REJ09B0054-0500 1. 2. 3. Except when switching modes, the level of the mode pins (MD2 to MD0) must be fixed until power-off by pulling the pins up or down. See sections 27.2.6, 27.3.6, 27.4.6, 27.5.6, and 27.6.6, Flash Memory Characteristics. Mode programming setup time tMDS (min) = 200 ns. Period during which flash memory access is prohibited (tsswe: Wait time after setting SWE1 bit)* 2 Period during which flash memory can be programmed (Execution of program in flash memory prohibited, and data reads other than verify operations prohibited) Notes: VCC FWE φ tOSC1 min 0 µs min 0 µs tMDS* 3 tMDS* 3 MD2 to MD0*1 RES SWE1bit SWE1 set SWE1 cleared tsswe 100 µs Programming/ erasing possible Wait time: Wait time: Figure 20.14 Power-On/Off Timing (Boot Mode) |
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