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H8S/2224 Scheda tecnica(PDF) 836 Page - Renesas Technology Corp |
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H8S/2224 Scheda tecnica(HTML) 836 Page - Renesas Technology Corp |
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836 / 1071 page ![]() Section 20 Flash Memory (F-ZTAT Version) Rev. 5.00 Aug 08, 2006 page 750 of 982 REJ09B0054-0500 V CC FWE t OSC1 min 0ms t MDS t MDS t MDS t RESW MD2 to MD0 RES SWE1 bit Mode change*1 Boot mode Mode change* 1 User mode User program mode User mode User program mode SWE1 set SWE1 cleared *4 *4 *2 *4 *4 1. 2. 3. 4. When entering boot mode or making a transition from boot mode to another mode, mode switching must be carried out by means of RES input When making a transition from boot mode to another mode, a mode programming setup time tMDS (min) of 200 ns is necessary with respect to RES clearance timing. See sections 27.2.6, 27.3.6, 27.4.6, 27.5.6 and 27.6.6, Flash Memory Characteristics. Wait time: 100 µs. Period during which flash memory access is prohibited (tsswe: Wait time after setting SWE1 bit)* 2 Period during which flash memory can be programmed (Execution of program in flash memory prohibited, and data reads other than verify operations prohibited) Notes: φ Figure 20.16 Mode Transition Timing (Example: Boot Mode → User Mode ↔ User Program Mode) |
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