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H8S/2224 Scheda tecnica(PDF) 948 Page - Renesas Technology Corp

Il numero della parte H8S/2224
Spiegazioni elettronici  16-Bit Single-Chip Microcomputer H8S Family/H8S/2200 Series
PDF  1071 Pages
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Produttore elettronici  RENESAS [Renesas Technology Corp]
Homepage  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

H8S/2224 Scheda tecnica(HTML) 948 Page - Renesas Technology Corp

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Section 27 Electrical Characteristics
Rev. 5.00 Aug 08, 2006 page 862 of 982
REJ09B0054-0500
27.2.6
Flash Memory Characteristics
Table 27.12 Flash Memory Characteristics
Conditions: VCC = 4.0 V to 5.5 V, AVCC = 4.0 V to 5.5 V, Vref = 4.0 V to AVCC,
VSS = AVSS = 0 V, Ta = –20°C to +75°C (Programming/erasing operating
temperature range)
Item
Symbol Min
Typ
Max
Unit
Test
Conditions
Programming time*
1
*2*4
tP
40
200
ms/
128 bytes
Erase time*
1
*3*5
tE
20
1000 ms/block
Reprogramming count
NWEC
100*
6
10000*
7
Times
Data hold time*
8
tDRP
10

Year
Programming Wait time after SWE1 bit setting*
1
tsswe
11
µs
Wait time after PSU1 bit setting*
1
tspsu
50
50
µs
tsp10
810
12
µs
tsp30
28
30
32
µs
1
≤ n ≤ 6
Wait time after P1 bit setting*
1
*4
tsp200
198
200
202
µs
7
≤ n ≤ 1000
Wait time after P1 bit clear*
1
tcp
55
µs
Wait time after PSU1 bit clear*
1
tcpsu
55
µs
Wait time after PV1 bit setting*
1
tspv
44
µs
Wait time after H'FF dummy write*
1
tspvr
22
µs
Wait time after PV1 bit clear*
1
tcpv
22
µs
Wait time after SWE1 bit clear*
1
tcswe
100
100
µs
N1

6*
4
Maximum programming count*
1
*4
N2

994*
4
Times
Erase
Wait time after SWE1 bit setting*
1
tsswe
11
µs
Wait time after ESU1 bit setting*
1
tsesu
100
100
µs
Wait time after E1 bit setting*
1
*5
tse
10
10
100
ms
Wait time after E1 bit clear*
1
tce
10
10
µs
Wait time after ESU1 bit clear*
1
tcesu
10
10
µs
Wait time after EV1 bit setting*
1
tsev
20
20
µs
Wait time after H'FF dummy write*
1
tsevr
22
µs
Wait time after EV1 bit clear*
1
tcev
44
µs
Wait time after SWE1 bit clear*
1
tcswe
100
100
µs
Maximum erase count*
1
*5
N

100
Times



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