H8SSLASH2214 datasheet(606/936 Pages) RENESAS

606 / 936 page

Section 15 ROM

Rev.4.00 Sep. 18, 2008 Page 546 of 872

REJ09B0189-0400

15.4

Overview of Flash Memory

15.4.1

Features

The HD64F2214 has 128 kbytes of on-chip flash memory. The features of the flash memory are

summarized below.

• Four flash memory operating modes

⎯ Program mode

⎯ Erase mode

⎯ Program-verify mode

⎯ Erase-verify mode

• Programming/erase methods

The flash memory is programmed 128 bytes at a time. Block erase (in single-block units) can

be performed. To erase multiple blocks, each block must be erased in turn. In block erasing, 1-

kbyte, 8-kbyte, 16-kbyte, 28-kbyte, and 32-kbyte block units can be set as required.

• Programming/erase times

The flash memory programming time is 40 ms (typ.) for simultaneous 128-byte programming,

equivalent to 312.5 µs (typ.) per byte, and the erase time is 20 ms/block (typ.).

• Reprogramming capability

The flash memory can be reprogrammed a minimum of 100 times.

• On-board programming modes

There are two modes in which flash memory can be programmed/erased/verified on-board:

⎯ Boot mode

⎯ User program mode

• Automatic bit rate adjustment

With data transfer in boot mode, the LSI’s bit rate can be automatically adjusted to match the

transfer bit rate of the host.

• Flash memory emulation in RAM

Flash memory programming can be emulated in real time by overlapping a part of RAM onto

flash memory.

• Protect modes

There are two protect modes, hardware and software, which allow protected status to be

designated for flash memory program/erase/verify operations.

• Programmer mode

Flash memory can be programmed/erased in programmer mode, using a PROM programmer,

as well as in on-board programming mode.

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