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H8S/2214 Scheda tecnica(PDF) 616 Page - Renesas Technology Corp |
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H8S/2214 Scheda tecnica(HTML) 616 Page - Renesas Technology Corp |
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616 / 936 page ![]() Section 15 ROM Rev.4.00 Sep. 18, 2008 Page 556 of 872 REJ09B0189-0400 15.7 Register Descriptions 15.7.1 Flash Memory Control Register 1 (FLMCR1) Bit: 7 6 5 4 3 2 1 0 FWE SWE1 ESU1 PSU1 EV1 PV1 E1 P1 Initial value: —* 0 0 0 0 0 0 0 R/W: R R/W R/W R/W R/W R/W R/W R/W Note: * Determined by the state of the FWE pin. FLMCR1 is an 8-bit register used for flash memory operating mode control. Program-verify mode or erase-verify mode for addresses H'00000 to H'1FFFF is entered by setting SWE1 bit to 1 when FWE = 1, then setting the PV1 or EV1 bit. Program mode for addresses H'00000 to H'1FFFF is entered by setting SWE1 bit to 1 when FWE = 1, then setting the PSU1 bit, and finally setting the P1 bit. Erase mode for addresses H'00000 to H'1FFFF is entered by setting SWE1 bit to 1 when FWE = 1, then setting the ESU1 bit, and finally setting the E1 bit. FLMCR1 is initialized by a power-on reset, and in hardware standby mode and software standby mode. Its initial value is H'80 when a high level is input to the FWE pin, and H'00 when a low level is input. When on-chip flash memory is disabled, a read will return H'00, and writes are invalid. Writes are enabled only in the following cases: Writes to bit SWE1 of FLMCR1 enabled when FWE = 1, to bits ESU1, PSU1, EV1, and PV1 when FWE = 1 and SWE1 = 1, to bit E1 when FWE = 1, SWE1 = 1 and ESU1 = 1, and to bit P1 when FWE = 1, SWE1 = 1, and PSU1 = 1. Bit 7—Flash Write Enable Bit (FWE): Sets hardware protection against flash memory programming/erasing. Bit 7 FWE Description 0 When a low level is input to the FWE pin (hardware-protected state) 1 When a high level is input to the FWE pin |
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