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H8S/2214 Scheda tecnica(PDF) 620 Page - Renesas Technology Corp |
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H8S/2214 Scheda tecnica(HTML) 620 Page - Renesas Technology Corp |
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620 / 936 page ![]() Section 15 ROM Rev.4.00 Sep. 18, 2008 Page 560 of 872 REJ09B0189-0400 15.7.3 Erase Block Register 1 (EBR1) Bit: 7 6 5 4 3 2 1 0 EB7 EB6 EB5 EB4 EB3 EB2 EB1 EB0 Initial value: 0 0 0 0 0 0 0 0 R/W: R/W R/W R/W R/W R/W R/W R/W R/W EBR1 is an 8-bit register that specifies the flash memory erase area block by block. EBR1 is initialized to H'00 by a power-on reset, in hardware standby mode and software standby mode, when a low level is input to the FWE pin, and when a high level is input to the FWE pin and the SWE1 bit in FLMCR1 is not set. When a bit in EBR1 is set to 1, the corresponding block can be erased. Other blocks are erase-protected. Only one of the bits of EBR1 and EBR2 combined can be set. Do not set more than one bit, as this will cause all the bits in both EBR1 and EBR2 to be automatically cleared to 0. When on-chip flash memory is disabled, a read will return H'00, and writes are invalid. The flash memory block configuration is shown in table 15.6. 15.7.4 Erase Block Register 2 (EBR2) Bit: 7 6 5 4 3 2 1 0 — — — — — — EB9 EB8 Initial value: 0 0 0 0 0 0 0 0 R/W: R/W R/W R/W R/W R/W R/W R/W R/W EBR2 is an 8-bit register that specifies the flash memory erase area block by block. EBR2 is initialized to H'00 by a power-on reset, in hardware standby mode and software standby mode, when a low level is input to the FWE pin. Bit 0 will be initialized to 0 if bit SWE1 of FLMCR1 is not set, even though a high level is input to pin FWE. When a bit in EBR2 is set to 1, the corresponding block can be erased. Other blocks are erase-protected. Only one of the bits of EBR1 and EBR2 combined can be set. Do not set more than one bit, as this will cause all the bits in both EBR1 and EBR2 to be automatically cleared to 0. Bits 7 to 2 are reserved and must only be written with 0. When on-chip flash memory is disabled, a read will return H'00, and writes are invalid. |
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