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H8S/2214 Scheda tecnica(PDF) 718 Page - Renesas Technology Corp

Il numero della parte H8S/2214
Spiegazioni elettronici  16-Bit Single-Chip Microcomputer H8S Family/H8S/2200 Series
PDF  936 Pages
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Produttore elettronici  RENESAS [Renesas Technology Corp]
Homepage  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

H8S/2214 Scheda tecnica(HTML) 718 Page - Renesas Technology Corp

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Section 18 Electrical Characteristics
Rev.4.00 Sep. 18, 2008 Page 658 of 872
REJ09B0189-0400
18.6
Flash Memory Characteristics
Table 18.12 lists the flash memory characteristics.
Table 18.12 Flash Memory Characteristics
Conditions: V
CC = 2.7 V to 3.6 V, AVCC = 2.7 V to 3.6 V, Vref = AVCC, VSS = AVSS = 0 V,
V
CC = 3.0 V to 3.6 V(program/erase operating voltage range),
T
a = -20°C to +75°C (program/erase operating temperature range)
Item
Symbol Min.
Typ.
Max.
Unit
Test
Conditions
Programming time*
1
*2 *4
t
P
—
40
200
ms/128
bytes
Erase time*
1
*3 *5
t
E
—
20
1000
ms/block
Rewrite time
N
WEC
100*
6
10000*
7
—
Times
Data retention time
t
DRP
*8
10
—
—
Years
Programming
Wait time after SWE1 bit setting*
1
t
sswe
1
1
—
µs
Wait time after PSU1 bit setting*
1
t
spsu
50
50
—
µs
Wait time after P1 bit setting*
1
*4
t
sp10
8
10
12
µs
t
sp30
28
30
32
µs
1
≤ n ≤ 6
t
sp200
198
200
202
µs
7
≤ n ≤ 1000
Wait time after P1 bit clearing*
1
t
cp
5
5
—
µs
Wait time after PSU1 bit clearing*
1
t
cpsu
5
5
—
µs
Wait time after PV1 bit setting*
1
t
spv
4
4
—
µs
Wait time after H'FF dummy write*
1
t
spvr
2
2
—
µs
Wait time after PV1 bit clearing*
1
t
cpv
2
2
—
µs
Wait time after SWE1 bit clearing*
1
t
cswe
100
100
—
µs
Maximum number of writes*
1
*4
N1
—
—
6*
4
Times
N2
—
—
994*
4
Times
Erasing
Wait time after SWE1 bit setting*
1
t
sswe
1
1
—
µs
Wait time after ESU1 bit setting*
1
t
sesu
100
100
—
µs
Wait time after E1 bit setting*
1
*5
t
se
10
10
100
ms
Wait time after E1 bit clearing*
1
t
ce
10
10
—
µs
Wait time after ESU1 bit clearing*
1
t
cesu
10
10
—
µs
Wait time after EV1 bit setting*
1
t
sev
20
20
—
µs
Wait time after H'FF dummy write*
1
t
sevr
2
2
—
µs
Wait time after EV1 bit clearing*
1
t
sev
4
4
—
µs
Wait time after SWE1 bit clearing*
1
t
cswe
100
100
—
µs
Maximum number of erases*
1
*5
N
—
—
100
Times
Notes: 1. Follow the program/erase algorithms when making the time settings.



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