H8SSLASH2224 datasheet(992/1071 Pages) RENESAS

992 / 1071 page

Section 27 Electrical Characteristics

Rev. 5.00 Aug 08, 2006 page 906 of 982

REJ09B0054-0500

Item

Symbol

Min

Typ

Max

Unit

Test

Conditions

Erasing

Wait time after SWE1 bit clearing

tcswe

100



µs

Maximum number of erases*



100

Times

Notes: 1. Follow the program/erase algorithms when making the time settings.

2. Programming time per 128 bytes (Indicates the total time during which the P1 bit is set

in flash memory control register 1 (FLMCR1). Does not include the program-verify

time.)

3. Time to erase one block (Indicates the time during which the E1 bit is set in FLMCR1.

Does not include the erase-verify time.)

4. Maximum programming time

P(max) = Wait time after P1 bit setting (tsp) × maximum number of writes (N))

(tsp30 + tsp10)

× 6 + (tsp200) × 994

5. For the maximum erase time (tE (max)), the following relationship applies between the

wait time after E1 bit setting (z) and the maximum number of erases (N):

tE (max) = Wait time after E1 bit setting (tse)

× maximum number of erases (N)

6. The minimum times that all characteristics after rewriting are guaranteed. (A range

between 1 and minimum value is guaranteed.)

7. The reference value at 25

°C. (Normally, it is a reference that rewriting is enabled up to

this value.)

8. Data hold characteristics when rewriting is performed within the range of specifications

including minimum value.

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