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H8S/2224 Scheda tecnica(PDF) 988 Page - Renesas Technology Corp |
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H8S/2224 Scheda tecnica(HTML) 988 Page - Renesas Technology Corp |
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988 / 1071 page ![]() Section 27 Electrical Characteristics Rev. 5.00 Aug 08, 2006 page 902 of 982 REJ09B0054-0500 Conditions A, B Item Symbol Min Max Unit Test Conditions WDT1 BUZZ output delay time tBUZD 100 ns Figure 27.30 SCI* Asynchronous tScyc 4 tcyc Figure 27.31 Input clock cycle Synchronous 6 Input clock pulse width tSCKW 0.4 0.6 tScyc Input clock rise time tSCKr 1.5 tcyc Input clock fall time tSCKf 1.5 Transmit data delay time tTXD 100 ns Figure 27.32 Receive data setup time (synchronous) tRXS 75 ns Receive data hold time (synchronous) tRXH 75 ns A/D converter Trigger input setup time tTRGS 40 ns Figure 27.33 Note: * The high level of P35/SCK1 and P34 is driven by NMOS. In order to output a high level at VCC = 4.5 V or below, a pull-up resistance must be connected externally. |
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