H8SSLASH2224 datasheet(971/1071 Pages) RENESAS

971 / 1071 page

Section 27 Electrical Characteristics

Rev. 5.00 Aug 08, 2006 page 885 of 982

REJ09B0054-0500

27.3.6

Flash Memory Characteristics

Table 27.25 lists the flash memory characteristics.

Table 27.25 Flash Memory Characteristics

Conditions: VCC = 2.7 V to 3.6 V, AVCC = 2.7 V to 3.6 V, Vref = 2.7 V to AVCC,

VSS = AVSS = 0 V, VCC = 3.0 V to 3.6 V (Programming/erasing operating voltage

range), Ta = –20°C to +50°C (Programming/erasing operating temperature range;

regular specifications, wide-range specifications)

Item

Symbol Min

Typ

Max

Unit

Test

Conditions

Programming time*

*2*4



200

ms/128 bytes

Erase time*

*3*5



100

1200

ms/block

Reprogramming count

NWEC

100*

10000*

7 

Times

Data hold time*

tDRP



year

Programming Wait time after SWE1 bit

setting*

tsswe



µs

Wait time after PSU1 bit

setting*

tspsu



µs

tsp10

1012µs

tsp30

µs

≤ n ≤ 6

Wait time after P1 bit

setting*

tsp200

198

200

202

µs

≤ n ≤ 1000

Wait time after P1 bit

clear*

tcp



µs

Wait time after PSU1 bit

clear*

tcpsu



µs

Wait time after PV1 bit

setting*

tspv



µs

Wait time after H'FF

dummy write*

tspvr



µs

Wait time after PV1 bit

clear*

tcpv



µs

Wait time after SWE1 bit

clear

tcswe

100



µs



Times

Maximum programming

count*



994*

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