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H8S/2224 Scheda tecnica(PDF) 972 Page - Renesas Technology Corp |
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H8S/2224 Scheda tecnica(HTML) 972 Page - Renesas Technology Corp |
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972 / 1071 page ![]() Section 27 Electrical Characteristics Rev. 5.00 Aug 08, 2006 page 886 of 982 REJ09B0054-0500 Item Symbol Min Typ Max Unit Test Conditions Erase Wait time after SWE1 bit setting* 1 tsswe 11 µs Wait time after ESU1 bit setting* 1 tsesu 100 100 µs Wait time after E1 bit setting* 1 *5 tse 10 10 100 ms Wait time after E1 bit clear* 1 tce 10 10 µs Wait time after ESU1 bit clear* 1 tcesu 10 10 µs Wait time after EV1 bit setting* 1 tsev 20 20 µs Wait time after H'FF dummy write* 1 tsevr 22 µs Wait time after EV1 bit clear* 1 tcev 44 µs Wait time after SWE1 bit clear tcswe 100 100 µs Maximum erase count* 1 *5 N 100 Times Notes: 1. Make each time setting in accordance with the program/program-verify flowchart or erase/erase-verify flowchart. 2. Programming time per 128 bytes (Shows the total period for which the P1 bit in the flash memory control register 1 (FLMCR1) is set. It does not include the program verification time.) 3. Block erase time (Shows the total period for which the E1 bit in FLMCR1 is set. It does not include the erase verification time.) 4. Maximum programming time value tp (max) = Wait time after P1 bit setting (tsp) × maximum program count (N) (tsp30 + tsp10) × 6 + (tsp200) × 994 5. Relationship among the maximum erase time (tE (max)), the wait time after E1 bit setting (tse), and the maximum erase count (N) is shown below. tE (max) = Wait time after E1 bit setting (tse) × maximum erase count (N) 6. The minimum times that all characteristics after rewriting are guaranteed. (A range between 1 and minimum value is guaranteed.) 7. The reference value at 25 °C. (Normally, it is a reference that rewriting is enabled up to this value.) 8. Data hold characteristics when rewriting is performed within the range of specifications including minimum value. |
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