ISL73847SEHDEMO2Z datasheet(33/40 Pages) RENESAS

33 / 40 page

R34DS0017EU0104 Rev.1.04

Page 33

Jan 31, 2025

ISL73041SEH Datasheet

▪ Route the PHS pin to the switch node of the half-bridge power stage with a short and wide trace to minimize

inductance and loop area.

▪ For the low-side drive, the PVCC capacitor, PVCC and PGND pins, low-side driver gate outputs, low-side FET

gate, and GND plane form a current loop during FET turn on and turn off. For the high-side drive, the bootstrap

capacitor, the BOOT and PHS pins, the high-side driver gate outputs, the high-side FET gate, and the switch

node form a current loop during FET turn-on and turn-off. Keep these loops short and wide, and avoid

overlapping with other sensitive signals.

▪ Size the phase node of the half-bridge (high-side FET source and low-side FET drain) area to handle the

current and thermal dissipation from the FETs and switching load. The phase node copper area usually ends up

being a significantly large shape. In addition, the phase node is where high voltage and high dv/dt switching

occurs. In general, there are two layout practices for handling the phase node. One recommendation is to

remove any conductors (including ground) that overlap the phase node on the adjacent layer of the PCB. The

other recommendation is to repeat the phase node shape on every layer of the PCB. Both methods minimize

the capacitive coupling of noise into the GND plane and prevent any sensitive analog signals from being routed

underneath the phase node and causing unintentional common mode noise.

7.2

Layout Example

RDU

Resistor

RDL

Resistor

AVCC

Capacitor

VDD

Capacitor

PVCC

Capacitor

BOOT

Capacitor

Upper Gate

Resistors

Lower Gate

Resistors

Upper GaN FET

Lower GaN FET

ISL73847SEHDEMO2Z Scheda tecnica(PDF) 33 Page - Renesas Technology Corp