R34DS0017EU0104 Rev.1.04

Page 15

Jan 31, 2025

ISL73041SEH Datasheet

PVCC Rising Above

UVLO to FLT Rising

Delay

tPVCCR

FB = PVCC

-

-

0.6

-

µs

PVCC Rising Above

UVLO to UG Rising

Delay

FB = PVCC; PWM = 5V

-

-

1.0

-

µs

PVCC Rising Above

UVLO to LG Rising Delay

FB = PVCC; PWM = 0V

-

-

1.0

-

µs

BOOT Falling Below

UVLO to UG Falling

Delay

tBOOTF

FB = PVCC; PWM = 5V

BOOT-PHS falling 4.5V to 3.5V

--

1.5

-

µs

BOOT Rising Above

UVLO to UG Rising

Delay

tBOOTR

FB = PVCC; PWM = 5V;

BOOT-PHS rising 3.5V to 4.5V

--

1.8

-

µs

1. Parameters with MIN and/or MAX limits are 100% tested at -55°C, +25°C, +125°C and at +25°C post radiation.

2. Typical values are not guaranteed.

Table 1. Burn-In and Operating Life Test Delta Parameters

Parameter

Symbol

Conditions

Delta Limits

Unit

Min

Max

VDD Shutdown Current

IDD_SHDN

EN = 0V

-0.12

0.12

mA

VDD Quiescent Current

IDDQ_1k

RDU = RDL = 1kΩ

-1

1

mA

IDDQ_10k

RDU = RDL = 10kΩ

-0.5

0.5

BOOT Quiescent Current

IBOOTQ

EN = VDD; PWM = Float;

BOOT-PHS = 4.5V

-50

50

µA

PVCC Reference Voltage

VFB

--6

6

mV

PVCC Output Voltage

PVCC2

VDD = 4.85V; FB = PVCC

-25

25

mV

PVCC4

VDD = 13.2V; FB = PVCC

-25

25

mV

PVCC Current Limit

PVCC_ILIMIT

VDD = 4.75V; FB = PVCC

-16

16

mA

PWM High-Level Threshold

VPWMH

VDD = 4.75V; FB = PVCC

-0.28

0.28

V

PWM Mid-Level Upper Threshold

VPWMMH

VDD = 4.75V; FB = PVCC

-0.24

0.24

V

PWM Mid-Level Lower Threshold

VPWMML

VDD = 4.75V; FB = PVCC

-0.145

0.145

V

PWM Low-Level Threshold

VPMWL

VDD = 4.75V; FB = PVCC

-0.095

0.095

V

UG Output High Level

VOH_UG

Source 100mA; Drop below BOOT

-13

13

mV

UG Output Low Level

VOL_UG

Sink 100mA; Rise above PHS

-9

9

mV

LG Output High Level

VOH_LG

Source 100mA; Drop below PVCC

-8

8

mV

LG Output Low Level

VOL_LG

Sink 100mA; Rise above PGND

-5

5

mV

Unless otherwise specified: VDD = 13.2V; EN = VDD; PVCC = 5.5V; CPVCC = 2.2µF; CAVCC = 2.2µF; CBOOT = 100nF to PHS;

PHS = PGND = 0V, TA=25°C. UG is defined as UGH = UGL. LG is defined as LGH = LGL. Boldface specifications apply across

the operating temperature range from TA= -55°C to +125°C and across a total ionizing dose of 75krad(Si) at +25°C with

exposure at a low dose rate of <10mrad(Si)/s.

Parameter

Symbol

Test Conditions

Temp.

Min[1]

Typ[2]

Max[1]

Unit