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ISL73847SEHDEMO2Z Scheda tecnica(PDF) 21 Page - Renesas Technology Corp

Il numero della parte ISL73847SEHDEMO2Z
Spiegazioni elettronici  Radiation Hardened 12V Half-Bridge GaN FET Driver
PDF  40 Pages
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Produttore elettronici  RENESAS [Renesas Technology Corp]
Homepage  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

ISL73847SEHDEMO2Z Scheda tecnica(HTML) 21 Page - Renesas Technology Corp

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R34DS0017EU0104 Rev.1.04
Page 21
Jan 31, 2025
ISL73041SEH Datasheet
Figure 34. High-Side Driver VOL and VOH vs
Temperature; 100mA load
Figure 35. Low-Side Driver VOL and VOH vs
Temperature; 100mA load
Figure 36. High-Side Driver Peak Source and Sink
Current vs Temperature
Figure 37. Low-Side Driver Peak Source and Sink
Current vs Temperature
Figure 38. Rise and Fall Times with 470nF on UG and
1000nF on LG vs Temperature; 30% to 70%
Figure 39. Rise and Fall Times with 470nF on UG and
1000nF on LG vs Temperature; 30% to 70%
Unless otherwise specified, typical performance curves are at VDD=12V, PHS=0V; PVCC=4.5V and TA = +25°C.
0
20
40
60
80
100
120
-55
-35
-15
5
25
45
65
85
105
125
Temperature (°C)
VOH_UG
VOL_UG
0
10
20
30
40
50
60
70
80
-55
-35
-15
5
25456585
105
125
Temperature (°C)
VOH_LG
VOL_LG
0
1
2
3
4
5
6
7
-55
-35
-15
5
25
45
65
85
105
125
Temperature (°C)
UG Sink
UG Source
0
2
4
6
8
10
12
-55
-35
-15
5
25
45
65
85
105
125
Temperature (°C)
LG Sink
LG Source
0
100
200
300
400
500
600
700
-55
-35
-15
5
25
45
65
85
105
125
Temperature (°C)
UG Rise
UG Fall
0
100
200
300
400
500
600
700
800
-55
-35
-15
5
25
45
65
85
105
125
Temperature (°C)
LG Rise
LG Fall



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