R34DS0017EU0104 Rev.1.04

Page 10

Jan 31, 2025

ISL73041SEH Datasheet

Bootstrap FET Switch

Low Current Voltage

VSWL

100µA through switch

-55 to

+125°C

-1

1.6

mV

High Current Voltage

VSWH

100mA through switch

-

-

145

mV

BOOT Switch Resistance

RSW

100mA through switch

-

-

1.45

Ω

Positive Window Detect

Rising Threshold

-PWM = 0V

160

250

400

mV

Positive Window Detect

Falling Threshold

-PWM = 0V

140

220

380

mV

Negative Window Detect

Rising Threshold

-PWM = 0V

-380

-210

-140

mV

Negative Window Detect

Falling Threshold

-PWM = 0V

-400

-240

-160

mV

Positive Window Detect

Hysteresis

-PWM = 0V

10

25

60

mV

Negative Window Detect

Hysteresis

-PWM = 0V

10

20

60

mV

FLT Open Drain with Internal Detect

Input High Leakage

Current

ILEAK

FLT = AVCC; VDD = 13.2V

EN = VDD; No fault condition

-55 to

+125°C

-1

-

1

µA

FLT Output Low Drive

VOL

ISINK = 10mA; EN = 0V

-

0.18

0.4

V

Fault Detect Input High

Threshold

VIH

VDD = 13.2V; EN = VDD

2.0

2.4

2.8

V

Fault Detect Input Low

Threshold

VIL

VDD = 13.2V; EN = VDD

1.0

1.6

2.0

V

Upper Gate High Output (UGH)

UGH Peak Source Current

IUGHSRC

VDD = 4.75V; FB = PVCC;

BOOT-PHS = 4.5V;

PWM = 5V; 470nF load on UG-PHS

--

2

-

A

UGH Output High Voltage

VOHUGH

ISOURCE = 100mA; Voltage drop

below BOOT

-55 to

+125°C

-90

130

mV

Lower Gate High Output (LGH)

LGH Peak Source Current

ILGHSRC

VDD = 4.75V; FB = PVCC;

BOOT-PHS = 4.5V;

PWM = 0V; 1µF load on LG-PGND

--

4

-

A

LGH Output High Voltage

VOHLGH

ISOURCE = 100mA; Voltage drop

below PVCC

-55 to

+125°C

-56

90

mV

Upper Gate Low Output (UGL)

UGL Peak Sink Current

IUGLSNK

VDD = 4.75V; FB = PVCC;

BOOT-PHS = 4.5V;

PWM = 0V; 470nF load on UG-PHS

--

4

-

A

Unless otherwise specified: VDD = 13.2V; EN = VDD; PVCC = 5.5V; CPVCC = 2.2µF; CAVCC =2.2µF; CBOOT = 100nF to PHS;

PHS = PGND = 0V; TA= 25°C. UG is defined as UGH = UGL. LG is defined as LGH = LGL. Boldface specifications apply across

the operating temperature range from -55°C to +125°C and across a total ionizing dose of 75krad(Si) at +25°C with exposure

at a low dose rate of <10mrad(Si)/s. (Cont.)

Parameter

Symbol

Test Conditions

Temp.

Min[1]

Typ.[2]

Max[1]

Unit