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ISL73847SEHDEMO2Z Scheda tecnica(PDF) 9 Page - Renesas Technology Corp |
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ISL73847SEHDEMO2Z Scheda tecnica(HTML) 9 Page - Renesas Technology Corp |
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9 / 40 page ![]() R34DS0017EU0104 Rev.1.04 Page 9 Jan 31, 2025 ISL73041SEH Datasheet AVCC Undervoltage Lockout (UVLO) AVCC UVLO Rising Threshold VRAVCC Test by recovering AVCC from constant current limit -55 to +125°C 4.46 4.6 4.74 V AVCC UVLO Falling Threshold VFAVCC Test by putting AVCC into constant current limit 4.28 4.41 4.52 V AVCC UVLO Hysteresis VHAVCC VRAVCC - VFAVCC 150 183 300 mV PVCC Undervoltage Lockout (UVLO) PVCC UVLO Rising Threshold VRPVCC PVCC = 5.5V with FB resistors[3] -55 to +125°C 5.21 5.34 5.45 V PVCC UVLO Falling Threshold VFPVCC PVCC = 5.5V with FB resistors[3] 5.07 5.17 5.27 V PVCC UVLO Hysteresis VHPVCC VRPVCC - VFPVCC 100 150 300 mV BOOT Undervoltage Lockout (UVLO) BOOT UVLO Rising Threshold VRBOOT - -55 to +125°C 3.8 4.0 4.2 V BOOT UVLO Falling Threshold VFBOOT - 3.6 3.8 4.0 V BOOT UVLO Hysteresis VHBOOT VRBOOT - VFBOOT 100 240 400 mV PWM and EN Input Pins EN High Level Threshold VIHEN PWM = 0V -55 to +125°C -1.8 2.0 V EN Low Level Threshold VILEN PWM = 0V 1.0 1.5 - V EN Input Hysteresis VHYSEN VIHEN - VILEN 100 325 400 mV PWM High Threshold VPWMH VDD = 4.75V to 13.2V -55 to +125°C -2.7 2.8 V PWM Middle Level Range VPWMM VDD = 4.75V to 13.2V 1.45 - 2.4 V PWM Low Threshold VPWML VDD = 4.75V to 13.2V 0.95 1.1 - V Mid-High Level Hysteresis - VDD = 4.75V to 13.2V - 100 200 mV Mid-Low Level Hysteresis - VDD = 4.75V to 13.2V - 200 350 mV PWM High Input Current IPWMH PWM = 5V 10 33 50 µA PWM Low Input Current IPWML PWM = 0V -50 -22 -10 µA PWM Pin Pull-Up Resistor RPWMU - 150 225 300 kΩ PWM Pin Pull-Down Resistor RPWML - 100 150 200 kΩ PWM Pin Floating Voltage VFLOAT - 1.90 2.0 2.135 V Unless otherwise specified: VDD = 13.2V; EN = VDD; PVCC = 5.5V; CPVCC = 2.2µF; CAVCC =2.2µF; CBOOT = 100nF to PHS; PHS = PGND = 0V; TA= 25°C. UG is defined as UGH = UGL. LG is defined as LGH = LGL. Boldface specifications apply across the operating temperature range from -55°C to +125°C and across a total ionizing dose of 75krad(Si) at +25°C with exposure at a low dose rate of <10mrad(Si)/s. (Cont.) Parameter Symbol Test Conditions Temp. Min[1] Typ.[2] Max[1] Unit |
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