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ISL73847SEHDEMO2Z Scheda tecnica(PDF) 9 Page - Renesas Technology Corp

Il numero della parte ISL73847SEHDEMO2Z
Spiegazioni elettronici  Radiation Hardened 12V Half-Bridge GaN FET Driver
PDF  40 Pages
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Produttore elettronici  RENESAS [Renesas Technology Corp]
Homepage  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

ISL73847SEHDEMO2Z Scheda tecnica(HTML) 9 Page - Renesas Technology Corp

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R34DS0017EU0104 Rev.1.04
Page 9
Jan 31, 2025
ISL73041SEH Datasheet
AVCC Undervoltage Lockout (UVLO)
AVCC UVLO Rising
Threshold
VRAVCC
Test by recovering AVCC from
constant current limit
-55 to
+125°C
4.46
4.6
4.74
V
AVCC UVLO Falling
Threshold
VFAVCC
Test by putting AVCC into constant
current limit
4.28
4.41
4.52
V
AVCC UVLO Hysteresis
VHAVCC
VRAVCC - VFAVCC
150
183
300
mV
PVCC Undervoltage Lockout (UVLO)
PVCC UVLO Rising
Threshold
VRPVCC
PVCC = 5.5V with FB resistors[3]
-55 to
+125°C
5.21
5.34
5.45
V
PVCC UVLO Falling
Threshold
VFPVCC
PVCC = 5.5V with FB resistors[3]
5.07
5.17
5.27
V
PVCC UVLO Hysteresis
VHPVCC
VRPVCC - VFPVCC
100
150
300
mV
BOOT Undervoltage Lockout (UVLO)
BOOT UVLO Rising
Threshold
VRBOOT
-
-55 to
+125°C
3.8
4.0
4.2
V
BOOT UVLO Falling
Threshold
VFBOOT
-
3.6
3.8
4.0
V
BOOT UVLO Hysteresis
VHBOOT
VRBOOT - VFBOOT
100
240
400
mV
PWM and EN Input Pins
EN High Level Threshold
VIHEN
PWM = 0V
-55 to
+125°C
-1.8
2.0
V
EN Low Level Threshold
VILEN
PWM = 0V
1.0
1.5
-
V
EN Input Hysteresis
VHYSEN
VIHEN - VILEN
100
325
400
mV
PWM High Threshold
VPWMH
VDD = 4.75V to 13.2V
-55 to
+125°C
-2.7
2.8
V
PWM Middle Level Range
VPWMM
VDD = 4.75V to 13.2V
1.45
-
2.4
V
PWM Low Threshold
VPWML
VDD = 4.75V to 13.2V
0.95
1.1
-
V
Mid-High Level Hysteresis
-
VDD = 4.75V to 13.2V
-
100
200
mV
Mid-Low Level Hysteresis
-
VDD = 4.75V to 13.2V
-
200
350
mV
PWM High Input Current
IPWMH
PWM = 5V
10
33
50
µA
PWM Low Input Current
IPWML
PWM = 0V
-50
-22
-10
µA
PWM Pin Pull-Up Resistor
RPWMU
-
150
225
300
PWM Pin Pull-Down
Resistor
RPWML
-
100
150
200
PWM Pin Floating Voltage
VFLOAT
-
1.90
2.0
2.135
V
Unless otherwise specified: VDD = 13.2V; EN = VDD; PVCC = 5.5V; CPVCC = 2.2µF; CAVCC =2.2µF; CBOOT = 100nF to PHS;
PHS = PGND = 0V; TA= 25°C. UG is defined as UGH = UGL. LG is defined as LGH = LGL. Boldface specifications apply across
the operating temperature range from -55°C to +125°C and across a total ionizing dose of 75krad(Si) at +25°C with exposure
at a low dose rate of <10mrad(Si)/s. (Cont.)
Parameter
Symbol
Test Conditions
Temp.
Min[1]
Typ.[2]
Max[1]
Unit



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