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ISL73847SEHDEMO2Z Scheda tecnica(PDF) 18 Page - Renesas Technology Corp

Il numero della parte ISL73847SEHDEMO2Z
Spiegazioni elettronici  Radiation Hardened 12V Half-Bridge GaN FET Driver
PDF  40 Pages
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Produttore elettronici  RENESAS [Renesas Technology Corp]
Homepage  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

ISL73847SEHDEMO2Z Scheda tecnica(HTML) 18 Page - Renesas Technology Corp

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R34DS0017EU0104 Rev.1.04
Page 18
Jan 31, 2025
ISL73041SEH Datasheet
Figure 16. Propagation Delay vs Temperature
Figure 17. Propagation Delay Matching vs Temperature
Figure 18. Dead Time Delay vs Temperature;
RDU = RDL = 10kΩ
Figure 19. Dead Time Delay Matching vs Temperature;
RDU = RDL = 10kΩ
Figure 20. VDD Static Bias Current vs RDU/RDL vs
Temperature; Enabled; PWM = Float
Figure 21. BOOT Static Bias Current vs Temperature;
PWM = Float
Unless otherwise specified, typical performance curves are at VDD=12V, PHS=0V; PVCC=4.5V and TA = +25°C.
27
28
29
30
31
32
33
-55
-35
-15
5
25
45
65
85
105
125
Temperature (°C)
PWM to UG
PWM to LG
-1.0
-0.8
-0.6
-0.4
-0.2
0.0
0.2
0.4
0.6
0.8
1.0
-55
-35
-15
5
25
45
65
85
105
125
Temperature (°C)
45
46
47
48
49
50
-55
-35
-15
5
25
45
65
85
105
125
Temperature (°C)
LG to UG
UG to LG
-2.0
-1.5
-1.0
-0.5
0.0
0.5
1.0
1.5
2.0
-55
-35
-15
5
25
45
65
85
105
125
Temperature (°C)
0
2
4
6
8
10
12
-55
-35
-15
5
25
45
65
85
105
125
Temperature (°C)
RDU = RDL = 1.3kΩ
RDU = RDL = 10kΩ
450
470
490
510
530
550
-55
-35
-15
5
25
45
65
85
105
125
Temperature (°C)



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