LM98640CVAL datasheet(46/55 Pages) TI2

46 / 55 page

LM98640QML-SP

SNAS461G – MAY 2010 – REVISED NOVEMBER 2018

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8 Application and Implementation

NOTE

Information in the following applications sections is not part of the TI component

specification, and TI does not warrant its accuracy or completeness. TI’s customers are

responsible for determining suitability of components for their purposes. Customers should

validate and test their design implementation to confirm system functionality.

8.1 Application Information

Careful consideration should be given to environmental conditions when using a product in a radiation

environment.

8.1.1 Total Ionizing Dose

Testing and qualification of this product is done according to MIL-STD-883, Test Method 1019.

This product is on Texas Instruments' CMOS9X process, a CMOS process shown to be ELDRS-Free. ELDRS

report for the process is available upon request.

Radiation lot acceptance testing (RLAT) is performed at high dose rate. On some lots the room temperature

anneal test is used, with anneal times up to 6 weeks. An RLAT report to the wafer level is available for each lot.

8.1.2 Single Event Latch-Up and Functional Interrupt

One time single event latch-up (SEL) and single event functional interrupt (SEFI) testing was preformed

according to EIA/JEDEC Standard, EIA/JEDEC57. SEL testing was conducted with the junction temperature at

125°C. The linear energy transfer threshold (LETth) shown in the features list on the front page is the maximum

LET tested. A test report is available upon request.

8.1.3 Single Event Effects

A report on single event upset (SEU) is available upon request.

LM98640CVAL Scheda tecnica(PDF) 46 Page - Texas Instruments