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H8S/2224 Scheda tecnica(PDF) 826 Page - Renesas Technology Corp |
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H8S/2224 Scheda tecnica(HTML) 826 Page - Renesas Technology Corp |
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826 / 1071 page ![]() Section 20 Flash Memory (F-ZTAT Version) Rev. 5.00 Aug 08, 2006 page 740 of 982 REJ09B0054-0500 20.8.2 Erase/Erase-Verify When erasing flash memory, the erase/erase-verify flowchart shown in figure 20.12 should be followed. 1. Prewriting (setting erase block data to all 0) is not necessary. 2. Erasing is performed in block units. Make only a single-bit specification in the erase block register 1 and 2 (EBR1 and EBR2). To erase multiple blocks, each block must be erased in turn. 3. The time during which the E1 bit is set to 1 is the flash memory erase time. 4. The watchdog timer (WDT) is set to prevent overprogramming due to program runaway, etc. Set a value greater than (tsesu + tse + tce + tcesu) ms as the WDT overflow period. 5. For a dummy write to a verify address, write 1-byte data H'FF to an address whose lower 1 bit are B'0. Verify data can be read in words from the address to which a dummy write was performed. 5. If the read data is not erased successfully, set erase mode again, and repeat the erase/erase- verify sequence as before. The maximum number of repetitions of the erase/erase-verify sequence is (N). |
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