H8SSLASH2214 datasheet(630/936 Pages) RENESAS

630 / 936 page

Section 15 ROM

Rev.4.00 Sep. 18, 2008 Page 570 of 872

REJ09B0189-0400

To select user program mode, select a mode that enables the on-chip flash memory (mode 6 or 7),

and apply a high level to the FWE pin. In this mode, on-chip supporting modules other than flash

memory operate as they normally would in modes 6 and 7.

The flash memory itself cannot be read while the SWE bit is set to 1 to perform programming or

erasing, so the control program that performs programming and erasing should be run in on-chip

RAM or external memory.

Figure 15.13 shows the procedure for executing the program/erase control program when

transferred to on-chip RAM.

Clear FWE*

FWE = high*

Branch to flash memory application

program

Branch to program/erase control

program in RAM area

Execute program/erase control

program (flash memory rewriting)

Transfer program/erase control

program to RAM

MD2, MD1, MD0 = 110, 111

Reset-start

Write the FWE assessment program and

transfer program (and the program/erase

control program if necessary) beforehand

Notes: Do not apply a constant high level to the FWE pin. Apply a high level to the FWE pin

only when the flash memory is programmed or erased. Also, while a high level is

applied to the FWE pin, the watchdog timer should be activated to prevent

overprogramming or overerasing due to program runaway, etc.

* For further information on FWE application and disconnection, see section 15.15,

Flash Memory Programming and Erasing Precautions.

Figure 15.13 User Program Mode Execution Procedure

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