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IS46DR16640C Scheda tecnica(PDF) 8 Page - Integrated Silicon Solution, Inc

Il numero della parte IS46DR16640C
Spiegazioni elettronici  Differential data strobe
PDF  49 Pages
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Produttore elettronici  ISSI [Integrated Silicon Solution, Inc]
Homepage  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS46DR16640C Scheda tecnica(HTML) 8 Page - Integrated Silicon Solution, Inc

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Integrated Silicon Solution, Inc. — www.issi.com
Rev. 00A
6/4/2013
IS43/46DR81280C, IS43/46DR16640C
Symbol
Parameter
Rating(1,2,3)
Units
TOPER
Commercial Temperature
Tc = 0 to +85
o
C
Industrial Temperature,
Tc = -40 to +95
o
C
Automotive Temperature (A1)
Ta = -40 to +85
o
C
Automotive Temperature (A2)
Tc = -40 to +105
o
C
Ta = -40 to +105
o
C
Operating Temperature Condition
ODT DC Electrical Characteristics
PARAMETER/CONDITION
SYMBOL
MIN
NOM MAX
UNITS NOTES
Rtt effective impedance value for EMR(1)[A6,A2]=0,1; 75 Ω
Rtt1(eff)
60
75
90
Ω
1
Rtt effective impedance value for EMR(1)[A6,A2]=1,0; 150 Ω Rtt2(eff)
120
150
180
Ω
1
Rtt effective impedance value for EMR(1)[A6,A2]=1,1; 50 Ω
Rtt3(eff)
40
50
60
Ω
1
Deviation of VM with respect to VDDQ/2
ΔVM
- 6
+ 6
%
1
Notes:
1. Test condition for Rtt measurements
Measurement Definition for Rtt(eff): Apply VIH (ac) and VIL (ac) to test pin separately, then measure current I(VIH (ac)) and I( VIL
(ac)) respectively. VIH (ac), VIL (ac), and VDDQ values defined in SSTL_18
Rtt (eff)
Vih (ac) - Vil (ac)
I(Vih (ac)) - I(Vil (ac))
Measurement Definition for VM: Measure voltage (VM) at test pin (midpoint) with no load.
ΔVM = [(2 x VM / VDDQ) - 1] x 100%
Notes:
1. Tc = Operating case temperature at center of package
2. Ta = Operating ambient temperature immediately above package center.
3. Both temperature specifications must be met.
Thermal Resistance:
Package
Substrate
Theta-ja
(Airflow = 0m/s)
Theta-ja
(Airflow = 1m/s)
Theta-ja
(Airflow = 2m/s)
Theta-jc
Units
60-ball BGA
4-layer
35.8
32.0
29.8
5.9
C/W
84-ball BGA
4-layer
33.9
30.3
28.3
5.7
C/W



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