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R7FA2L1AB2DFN Scheda tecnica(PDF) 31 Page - Renesas Technology Corp

Il numero della parte R7FA2L1AB2DFN
Spiegazioni elettronici  Ultra low power 48 MHz Arm짰 Cortex-M23 core, up to 256-KB code flash memory
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Produttore elettronici  RENESAS [Renesas Technology Corp]
Homepage  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

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Table 2.11
Operating and standby current (2)
Conditions: VCC = AVCC0 = 1.6 to 5.5 V
Parameter
Symbol
Typ*3
Max
Unit
Test conditions
Supply
current*1
Software
Standby
mode*2
All
SRAMs(0x2000_00
00 to
0x2000_7FFF) are
on
Ta = 25°C
ICC
0.30
2.2
µA
—
Ta = 55°C
0.65
5.3
Ta = 85°C
2.0
20
Ta = 105°C
4.0
70
Only 8KB SRAM
(0x2000_4000 to
0x2000_5FFF) is on
Ta = 25°C
0.25
2.2
Ta = 55°C
0.6
5.3
Ta = 85°C
1.8
20
Ta = 105°C
3.65
70
Increment for RTC operation with low-speed on-
chip oscillator*4
0.30
—
—
Increment for RTC operation in normal operation
mode with sub-clock oscillator*4
0.20
—
SOMCR.SODRV[1:0] are 11b
(Low power mode 3)
RCR4.ROPSEL is 0 (RTC
operation in normal operation
mode)
0.95
—
SOMCR.SODRV[1:0] are 00b
(normal mode)
RCR4.ROPSEL is 0 (RTC
operation in normal operation
mode)
Increment for RTC operation in low-consumption
clock mode with sub-clock oscillator*4
0.11
—
SOMCR.SODRV[1:0] are 11b
(Low power mode 3)
RCR4.ROPSEL is 1 (RTC
operation in low-consumption
clock mode)
0.90
—
SOMCR.SODRV[1:0] are 00b
(normal mode)
RCR4.ROPSEL is 1 (RTC
operation in low-consumption
clock mode)
Note 1. Supply current values do not include output charge/discharge current from all pins. The values apply when internal pull-up MOS
transistors are in the off state. The supply current is total current flowing into VCC.
Note 2. The IWDT and LVD are not operating.
Note 3. VCC = 3.3 V.
Note 4. Includes the low-speed on-chip oscillator or sub-oscillation circuit current.
Table 2.12
Operating and standby current (3) (1 of 2)
Conditions: VCC = AVCC0 = 1.6 to 5.5 V
Parameter
Symbol
Min
Typ
Max
Unit
Test conditions
Analog power
supply current
During 12-bit A/D conversion (at high-speed
conversion)
IAVCC0
—
—
1.44
mA
—
During 12-bit A/D conversion (at low-power
conversion)
—
—
0.78
mA
—
During 12-bit D/A conversion*1
—
—
0.8
mA
—
Waiting for 12-bit A/D and 12-bit D/A
conversion (all units)*2
—
—
1.0
µA
—
Reference
power supply
current
During 12-bit A/D conversion
IREFH0
—
—
120
µA
—
Waiting for 12-bit A/D conversion
—
—
60
nA
—
Temperature Sensor (TSN) operating current
ITNS
—
95
—
µA
—
RA2L1 Datasheet
2. Electrical Characteristics
R01DS0385EJ0100 Rev.1.00
Aug 06, 2020
Page 31 of 110



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