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R7FA2L1AB2DFN Scheda tecnica(PDF) 77 Page - Renesas Technology Corp |
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R7FA2L1AB2DFN Scheda tecnica(HTML) 77 Page - Renesas Technology Corp |
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77 / 110 page ![]() Table 2.52 Code flash characteristics (2) (2 of 2) High-speed operating mode Conditions: VCC = AVCC0 = 1.8 to 5.5 V Parameter Symbol ICLK = 1 MHz ICLK = 48 MHz Unit Min Typ Max Min Typ Max Blank check time 4-byte tBC4 — — 46.5 — — 8.3 µs 2-KB tBC2K — — 3681 — — 240 µs Erase suspended time tSED — — 22.3 — — 10.5 µs Access window information program Start-up area selection and security setting time tAWSSAS — 21.2 570 — 11.4 423 ms OCD/serial programmer ID setting time*1 tOSIS — 84.7 2280 — 45.3 1690 ms Flash memory mode transition wait time 1 tDIS 2 — — 2 — — µs Flash memory mode transition wait time 2 tMS 15 — — 15 — — µs Note: Does not include the time until each operation of the flash memory is started after instructions are executed by software. Note: The lower-limit frequency of ICLK is 1 MHz during programming or erasing the flash memory. When using ICLK at below 4 MHz, the frequency can be set to 1 MHz, 2 MHz, or 3 MHz. A non-integer frequency such as 1.5 MHz cannot be set. Note: The frequency accuracy of ICLK must be ± 1.0% during programming or erasing the flash memory. Confirm the frequency accuracy of the clock source. Note 1. Total time of four commands. Table 2.53 Code flash characteristics (3) Middle-speed operating mode Conditions: VCC = AVCC0 = 1.6 to 5.5 V, Ta = -40 to +85°C Parameter Symbol ICLK = 1 MHz ICLK = 8 MHz*2 Unit Min Typ Max Min Typ Max Programming time 4-byte tP4 — 86 732 — 39 356 µs Erasure time 2-KB tE2K — 12.5 355 — 6.2 227 ms Blank check time 4-byte tBC4 — — 46.5 — — 11.3 µs 2-KB tBC2K — — 3681 — — 534 µs Erase suspended time tSED — — 22.3 — — 11.7 µs Access window information program Start-up area selection and security setting time tAWSSAS — 21.2 570 — 12.2 435 ms OCD/serial programmer ID setting time*1 tOSIS — 84.7 2280 — 48.7 1740 ms Flash memory mode transition wait time 1 tDIS 2 — — 2 — — µs Flash memory mode transition wait time 2 tMS 15 — — 15 — — µs Note: Does not include the time until each operation of the flash memory is started after instructions are executed by software. Note: The lower-limit frequency of ICLK is 1 MHz during programming or erasing the flash memory. When using ICLK at below 4 MHz, the frequency can be set to 1 MHz, 2 MHz, or 3 MHz. A non-integer frequency such as 1.5 MHz cannot be set. Note: The frequency accuracy of ICLK must be ± 1.0% during programming or erasing the flash memory. Confirm the frequency accuracy of the clock source. Note 1. Total time of four commands. Note 2. When 1.8 V ≤ VCC = AVCC0 ≤ 5.5 V RA2L1 Datasheet 2. Electrical Characteristics R01DS0385EJ0100 Rev.1.00 Aug 06, 2020 Page 77 of 110 |
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