R7FA2L1AB2DFN datasheet(78/110 Pages) RENESAS

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Table 2.54

Code flash characteristics (4)

Low-speed operating mode

Conditions: VCC = AVCC0 = 1.6 to 5.5 V, Ta = -40 to +85°C

Parameter

Symbol

ICLK = 1 MHz

ICLK = 2 MHz

Unit

Min

Typ

Max

Min

Typ

Max

Programming time

4-byte

tP4

—

732

—

502

µs

Erasure time

2-KB

tE2K

—

12.5

355

—

8.8

280

Blank check time

4-byte

tBC4

—

46.5

—

23.3

µs

2-KB

tBC2K

—

3681

—

1841

µs

Erase suspended time

tSED

—

22.3

—

16.2

µs

Access window information program

Start-up area selection and security

setting time

tAWSSAS —

21.2

570

—

15.9

491

OCD/serial programmer ID setting

time*1

tOSIS

—

84.7

2280

—

63.5

1964

Flash memory mode transition wait

time 1

tDIS

—

µs

Flash memory mode transition wait

time 2

tMS

—

µs

Note:

Does not include the time until each operation of the flash memory is started after instructions are executed by software.

Note:

The lower-limit frequency of ICLK is 1 MHz during programming or erasing the flash memory. When using ICLK at below 4 MHz, the

frequency can be set to 1 MHz or 2 MHz. A non-integer frequency such as 1.5 MHz cannot be set.

Note:

The frequency accuracy of ICLK must be ± 1.0% during programming or erasing the flash memory. Confirm the frequency accuracy

of the clock source.

Note 1. Total time of four commands.

2.11.2

Data Flash Memory Characteristics

Table 2.55

Data flash characteristics (1)

Parameter

Symbol

Min

Typ

Max

Unit

Conditions

Reprogramming/erasure cycle*1

NDPEC

100000

1000000

—

Times

—

Data hold time

After 10000 times of NDPEC

tDDRP

20*2 *3

—

Year

Ta = +85°C

Ta = +105°C

After 100000 times of NDPEC

5*2 *3

—

Year

After 1000000 times of NDPEC

—

1*2 *3

—

Year

Ta = +25°C

Note 1. The reprogram/erase cycle is the number of erasure for each block. When the reprogram/erase cycle is n times (n = 100,000),

erasing can be performed n times for each block. For instance, when 1-byte programming is performed 1,000 times for different

addresses in 1-byte blocks, and then the entire block is erased, the reprogram/erase cycle is counted as one. However,

programming the same address for several times as one erasure is not enabled. (overwriting is prohibited.)

Note 2. Characteristics when using the flash memory programmer and the self-programming library provided by Renesas Electronics.

Note 3. These results are target spec, may changed after reliability testing.

Table 2.56

Data flash characteristics (2) (1 of 2)

High-speed operating mode

Conditions: VCC = AVCC0 = 1.8 to 5.5 V

Parameter

Symbol

ICLK = 4 MHz

ICLK = 48 MHz

Unit

Min

Typ

Max

Min

Typ

Max

Programming time

1-byte

tDP1

—

404

—

321

µs

Erasure time

1-KB

tDE1K

—

8.8

280

—

6.1

224

Blank check time

1-byte

tDBC1

—

15.2

—

8.3

µs

1-KB

tDBC1K

—

1832

—

466

µs

Suspended time during erasing

tDSED

—

13.2

—

10.5

µs

RA2L1 Datasheet

2. Electrical Characteristics

R01DS0385EJ0100 Rev.1.00

Aug 06, 2020

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