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R7FA2L1AB2DFN Scheda tecnica(PDF) 76 Page - Renesas Technology Corp |
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R7FA2L1AB2DFN Scheda tecnica(HTML) 76 Page - Renesas Technology Corp |
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76 / 110 page ![]() Table 2.50 ACMPLP characteristics (2 of 2) Conditions: VCC = AVCC0 = 1.6 to 5.5 V, VSS = AVSS0 = 0 V Parameter Symbol Min Typ Max Unit Test conditions Offset voltage High-speed mode — — — 50 mV — Low-speed mode — — — 40 mV — Window mode — — — 60 mV — Internal reference voltage for window mode VRFH — 0.76 × VCC — V — VRFL — 0.24 × VCC — V — Operation stabilization wait time High-speed mode Tcmp 100 — — µs — Low-speed mode 200 — — Note 1. The internal reference voltage can be selected as ACMPLP reference voltage only when 2.94 V ≤ VCC ≤ 5.50 V. Input voltage Reference voltage Output voltage Td Td +100 mV -100 mV Figure 2.47 Output delay time 2.11 Flash Memory Characteristics 2.11.1 Code Flash Memory Characteristics Table 2.51 Code flash characteristics (1) Parameter Symbol Min Typ Max Unit Conditions Reprogramming/erasure cycle*1 NPEC 1000 — — Times — Data hold time After 1000 times NPEC tDRP 20*2 *3 — — Year Ta = +85°C Ta = +105°C Note 1. The reprogram/erase cycle is the number of erasures for each block. When the reprogram/erase cycle is n times (n = 1,000), erasing can be performed n times for each block. For instance, when 4-byte programming is performed 512 times for different addresses in 2-KB blocks, and then the entire block is erased, the reprogram/erase cycle is counted as one. However, programming the same address for several times as one erasure is not enabled (overwriting is prohibited). Note 2. Characteristic when using the flash memory programmer and the self-programming library provided by Renesas Electronics. Note 3. This result is target spec, may changed after reliability testing. Table 2.52 Code flash characteristics (2) (1 of 2) High-speed operating mode Conditions: VCC = AVCC0 = 1.8 to 5.5 V Parameter Symbol ICLK = 1 MHz ICLK = 48 MHz Unit Min Typ Max Min Typ Max Programming time 4-byte tP4 — 86 732 — 34 321 µs Erasure time 2-KB tE2K — 12.5 355 — 5.6 215 ms RA2L1 Datasheet 2. Electrical Characteristics R01DS0385EJ0100 Rev.1.00 Aug 06, 2020 Page 76 of 110 |
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