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MX25L3233F Scheda tecnica(PDF) 69 Page - Macronix International

Il numero della parte MX25L3233F
Spiegazioni elettronici  3V, 32M-BIT [x 1/x 2/x 4] CMOS MXSMIO짰 (SERIAL MULTI I/O) FLASH MEMORY
PDF  84 Pages
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Produttore elettronici  MCNIX [Macronix International]
Homepage  http://www.macronix.com
Logo MCNIX - Macronix International

MX25L3233F Scheda tecnica(HTML) 69 Page - Macronix International

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MX25L3233F
P/N: PM2113
Rev. 1.6, March 10, 2017
Notes:
1. tCH + tCL must be greater than or equal to 1/ fC.
2. The value guaranteed by characterization, not 100% tested in production.
3. Only applicable as a constraint for a WRSR instruction when SRWD is set at 1.
4. Latency time is required to complete Erase/Program Suspend operation until WIP bit is "0".
5. For tPRS, minimum timing must be observed before issuing the next program suspend command.
However, a period equal to or longer than the typical timing is required in order for the program operation
to make progress.
6. For tERS, minimum timing must be observed before issuing the next erase suspend command.
However, a period equal to or longer than the typical timing is required in order for the erase operation to
make progress.
Symbol Alt. Parameter
Min.
Typ.
Max. Unit
tRCR
Recovery Time from Read
20
us
tRCP
Recovery Time from Program
20
us
tRCE
Recovery Time from Erase
12
ms
tDP
CS# High to Deep Power-down Mode
10
us
tRES1
CS# High to Standby Mode without Electronic Signature
Read
100
us
tRES2
CS# High to Standby Mode with Electronic Signature Read
100
us
tW
Write Status Register Cycle Time
40
ms
tBP
Byte-Program
10
50
us
tPP
Page Program Cycle Time
0.33
1.2
ms
tSE
Sector Erase Cycle Time (4KB)
25
200
ms
tBE32K
Block Erase Cycle Time (32KB)
0.14
0.6
s
tBE
Block Erase Cycle Time (64KB)
0.25
1
s
tCE
Chip Erase Cycle Time
10
30
s
tWSR
Write Security Register Time
1
ms



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