MX25L3233F datasheet(75/84 Pages) MCNIX

Il numero della parte	MX25L3233F

Spiegazioni elettronici	3V, 32M-BIT [x 1/x 2/x 4] CMOS MXSMIO짰 (SERIAL MULTI I/O) FLASH MEMORY

PDF	84 Pages

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Produttore elettronici	MCNIX [Macronix International]

Homepage	http://www.macronix.com

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75 / 84 page

MX25L3233F

P/N: PM2113

Rev. 1.6, March 10, 2017

15. ERASE AND PROGRAMMING PERFORMANCE

16. DATA RETENTION

Min.

Max.

Input Voltage with respect to GND on all power pins, SI, CS#

-1.0V

2 VCCmax

Input Voltage with respect to GND on SO

-1.0V

VCC + 1.0V

Current

-100mA

+100mA

Includes all pins except VCC. Test conditions: VCC = 3.0V, one pin at a time.

17. LATCH-UP CHARACTERISTICS

Parameter

Condition

Min.

Max.

Unit

Data retention

55˚C

years

Notes:

1. Typical program and erase time assumes the following conditions: 25°C, 3.3V, and checkerboard pattern.

2. Under worst conditions of 85°C and 2.65V.

3. System-level overhead is the time required to execute the first-bus-cycle sequence for the programming com-

mand.

Parameter

Typ.(1)

Max.(2)

Unit

Write Status Register Cycle Time

Sector Erase Time (4KB)

200

Block Erase Time (64KB)

0.25

Block Erase Time (32KB)

0.14

0.6

Chip Erase Time

Byte Program Time (via page program command)

Page Program Time

0.33

1.2

Erase/Program Cycle

100,000

cycles

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