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MX25L3233F Scheda tecnica(PDF) 35 Page - Macronix International

Il numero della parte MX25L3233F
Spiegazioni elettronici  3V, 32M-BIT [x 1/x 2/x 4] CMOS MXSMIO짰 (SERIAL MULTI I/O) FLASH MEMORY
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Produttore elettronici  MCNIX [Macronix International]
Homepage  http://www.macronix.com
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MX25L3233F Scheda tecnica(HTML) 35 Page - Macronix International

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MX25L3233F
P/N: PM2113
Rev. 1.6, March 10, 2017
Another sequence of issuing 4READ instruction especially useful in random access is: CS# goes low→send
4READ instruction→3-bytes address interleave on SIO3, SIO2, SIO1 & SIO0→performance enhance toggling
bit P[7:0]→4 dummy cycles →data out until CS# goes high → CS# goes low (The following 4READ instruction is
not allowed, hence 8 cycles of 4READ can be saved comparing to normal 4READ mode) → 24-bit random ac-
cess address (Please refer to "Figure 16. 4 x I/O Read enhance performance Mode Sequence (Command EBh) (SPI
Mode)" ).
In the performance-enhancing mode (Notes of "Figure 16. 4 x I/O Read enhance performance Mode Sequence
(Command EBh) (SPI Mode)"), P[7:4] must be toggling with P[3:0]; likewise P[7:0]=A5h, 5Ah, F0h or 0Fh can
make this mode continue and reduce the next 4READ instruction. Once P[7:4] is no longer toggling with P[3:0];
likewise P[7:0]=FFh, 00h, AAh or 55h. These commands will reset the performance enhance mode. And after-
wards CS# is raised and then lowered, the system then will return to normal operation.
While Program/Erase/Write Status Register cycle is in progress, 4READ instruction is rejected without any im-
pact on the Program/Erase/Write Status Register current cycle.



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