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MX25L3233F Scheda tecnica(PDF) 33 Page - Macronix International

Il numero della parte MX25L3233F
Spiegazioni elettronici  3V, 32M-BIT [x 1/x 2/x 4] CMOS MXSMIO짰 (SERIAL MULTI I/O) FLASH MEMORY
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MX25L3233F
P/N: PM2113
Rev. 1.6, March 10, 2017
10-11. Quad Read Mode (QREAD)
The QREAD instruction enable quad throughput of Serial NOR Flash in read mode. A Quad Enable (QE) bit of
status Register must be set to "1" before sending the QREAD instruction. The address is latched on rising edge
of SCLK, and data of every four bits (interleave on 4 I/O pins) shift out on the falling edge of SCLK at a maximum
frequency fQ. The first address byte can be at any location. The address is automatically increased to the next
higher address after each byte data is shifted out, so the whole memory can be read out at a single QREAD in-
struction. The address counter rolls over to 0 when the highest address has been reached. Once writing QREAD
instruction, the following data out will perform as 4-bit instead of previous 1-bit.
The sequence of issuing QREAD instruction is: CS# goes low→ sending QREAD instruction → 3-byte address
on SI → 8-bit dummy cycle → data out interleave on SIO3, SIO2, SIO1 & SIO0→ to end QREAD operation can
use CS# to high at any time during data out.
While Program/Erase/Write Status Register cycle is in progress, QREAD instruction is rejected without any im-
pact on the Program/Erase/Write Status Register current cycle.
Figure 14. Quad Read Mode Sequence (Command 6Bh)
High Impedance
2
1
345678
0
SCLK
SI/SIO0
SO/SIO1
CS#
29
9
30 31 32 33
38 39 40 41 42
6B
High Impedance
WP#/SIO2
High Impedance
HOLD#/SIO3
8 dummy cycles
D4 D0
D5 D1
D6 D2
D7 D3
D4 D0
D5 D1
D6 D2
D7 D3
D4
D5
D6
D7
A23 A22
A2 A1 A0
Command
24 ADD Cycles
Data
Out 1
Data
Out 2
Data
Out 3



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