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HC05V7GRS/D Scheda tecnica(PDF) 159 Page - NXP Semiconductors |
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HC05V7GRS/D Scheda tecnica(HTML) 159 Page - NXP Semiconductors |
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159 / 170 page ![]() SECTION 17: ELECTRICAL SPECIFICATIONS Page 145 MC68HC05V7 Specification Rev. 1.0 17.8 CONTROL TIMING (VDD =3.5-4.5 Vdc ±10%, VSS = 0 Vdc, TA = -40°C to +85°C, unless otherwise noted) NOTES: 1. The 2-bit timer prescaler is the limiting factor in determining timer resolution. 2. The minimum period tILIL or tIHIH should not be less than the number of cycles it takes to execute the interrupt service routine plus 19 tCYC. 3. The minimum period tTLTL should not be less than the number of cycles it takes to execute the capture interrupt service routine plus 24 tCYC. Symbol Characteristic Min Max nS --- tosc1 OSC1 Pulse Width 90 tCYC --- tIHIH PA0-7, PC0-7 Interrupt Pulse Period note 3 nS --- tIHIL PA0-7, PC0-7 Interrupt Pulse Width High (Edge-Triggered) 120 tCYC --- tILIL IRQ Interrupt Pulse Period note 3 nS --- tILIH IRQ Interrupt Pulse Width Low (Edge-Triggered) 120 tCYC --- tRL RESET Pulse Width Low 1.5 tCYC TBD tILCH Stop Recovery Startup Time (Crystal Oscillator option) --- tCYC TBD tOXON Crystal Oscillator Startup Time (Crystal Oscillator option) --- nS --- tCYC Cycle Time (1 ÷ f OP) 476 MHz MHz fOP fOP Internal Operating Frequency Crystal Oscillator (fOSC ÷ 2) External Clock (fOSC ÷ 2) --- DC 2.1 2.1 Units MHz MHz 4.2 4.2 fOSC fOSC Frequency of Operation Crystal Oscillator Option External Clock Source 0.1 DC mS --- tEEPGM EEPROM Programming Time per Byte 15 mS --- tEBYT EEPROM Erase Time per Byte 15 mS --- tEBLOCK EEPROM Erase Time per Block 15 µS 10 tFPV EEPROM Programming Voltage Discharge Period µs 5.0 t RCON RC Oscillator Stabilization Time -- mS --- tEBULK EEPROM Bulk Erase Time 15 16-Bit Timer Resolution (note 2) Input Capture Pulse Width (See Figure 11-4) Input Capture Period tCYC nS tCYC tRESL tTH,tTL tTLTL 4.0 250 note 4 -- -- -- Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com |
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